MONOCRYSTALLINE
WAFER
Specification:
- Method : Dimond wire sawing
- Type: (p-type)
- Specific electric resistance from 0,5 to 1,5 Ω·сm
- Life time of minority charge carrier,> 20 microseconds;
- Oxygen concentration < 9 · 1017
- Carbon concentration < 1 · 1017
- Length 156,75±0,25 mm ;
- Diagonal 210 ± 0,25 mm;
- Chamfer length 8,5 ± 0,5 ;
- Thickness 190 ± 10 µm;
- TTV < 30 µm;
- Bow < 50 µm;
- Saw marks depth < 10 µm;;
- Chips no more than 0,3 mm;
- Microcracks, spots, holes – not present
MULTICRYSTALLINE
WAFER
Specification:
- Method : Dimond wire sawing ;
- Type: (p-type)
- Specific electric resistance from 1,0 to 3,0 Ω·cm
- Life time of minority charge carrier,> 3,5 microseconds;
- Oxygen concentration < 5 · 1017
- Carbon concentration < 5 · 1017
- Length 156,75 ± 0,25 mm
- Diagonal 220,2 ± 0,5 mm
- Chamfer length 0,5 – 2 mm
- Thickness 190 ± 10 µm
- TTV < 30 µm
- Bow < 50 µm
- Saw marks depth < 10 µm
- Chips no more than 0,3 mm;
- Microcracks, spots, holes – not present
